Abstract
The polycrystalline sample of a double perovskite, Sm2NiMnO6 was synthesized by a solid-state reaction route. From the X-ray structural study, it is found that the structure of the material is monoclinic with lattice parameters: a = 4.1750(63) Å, b = 7.6113(63) Å, c = 5.9896(63) Å, and β = 112.70°. These parameters are very close to and consistent with those of such type of materials. The dielectric, impedance, AC conductivity, and electrical modulus properties of the sample were studied in the temperature range of 25–300 °C and the frequency range of 1 kHz–1 MHz. Typical relaxor behavior observed in the dielectric studies was confirmed by Vogel—Fulcher fitting. From the Nyquist plots, the temperature dependent contribution of grain and grain boundary effect was confirmed. The non-Debye type of relaxation was found using the complex impedance spectroscopy. The magnetic study revealed that the sample had paramagnetic behavior at room temperature. Magneto-electric (ME) coefficient was obtained by changing DC bias magnetic field. This type of lead-free relaxor ferroelectric compound may be useful for high-temperature applications.
Highlights
Multiferroics are a special class of advanced materials
The origin of magnetism is associated with the spin ordering, and it requires half filled d-orbital
Ferroelectric materials are used in fabrication of capacitors having large dielectric constant, transducers actuators, and their memory applications
Summary
Multiferroics are a special class of advanced materials. Such type of materials has more than one primary ferroic order parameters. For practical applications of multiferroics, it is a great challenge to achieve the existence of magneto-electric (ME) coupling [1] in the materials They exhibit different properties, such as insulating, metallic, ferromagnetic, ferroelectric, magneto-dielectric, multiferroic, etc. Most of the relaxor ferroelectrics are complex perovskite structure having fully or partially disorders among two or more ions in the Aand B-sub-lattice of the perovskite (ABO3) structure [11] This material may be useful for various industrial applications including non-volatile memories, capacitors, sensors, actuators, resonant wave devices (such as radiofrequency filters), infra-red detectors, optical switches, and electric-motor overload protection circuits with multiple function, making them more attractive [12]. The diffused phase transition with the relaxor behavior of the material is discussed in great details
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