Abstract
While TaO/sub x/, HfO/sub x/, ZrO/sub x/, Hf-doped TaO/sub x/, and Zr-doped TaO/sub x/ thin films are promising high-k gate dielectric candidates, their intrinsic reliability has not yet been investigated. In this paper, the authors examine some fundamental reliability aspects of these high-k films through ramp voltage stress testing. By studying dielectric relaxation and analyzing the transient conductivity, the breakdown mode of the tested high-k film is identified; a sensitive method of breakdown detection in ramped voltage tests is proposed and investigated.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE transactions on device and materials reliability : a publication of the IEEE Electron Devices Society and the IEEE Reliability Society
Paper Title
Journal
Date
