Dielectric property and energy-storage performance of (1–x)PbTiO3–xBi(Mg0.5Zr0.5)O3 relaxor ferroelectric thin films

Abstract

Relaxor ferroelectric materials stand out in pulse power devices for their excellent energy-storage performance. Here, Bi(Mg0.5Zr0.5)O3 (BMZ)-modified PbTiO3 (PT) relaxor ferroelectric thin films were prepared on LaNiO3(LNO)(100)/Pt(111)/TiO2/SiO2/Si substrates. (1–x)PbTiO3–xBi(Mg0.5Ti0.5)O3 thin films possess prominent increasing relaxor behavior with increasing of BMZ content, which is conducive to obtaining large polarization difference (Pmax − Pr). Meanwhile, Mg2+ and Zr4+ are beneficial to reduce leakage current density and increase breakdown field strength (BDS). Therefore, 0.6PT–0.4BMZ thin films simultaneously exhibit a high recoverable energy-storage density (Wrec) of 32.3 J/cm3 and a large energy-storage efficiency (η) of 51.4%. In addition, 0.6PT–0.4BMZ film shows favorable frequency (100 Hz–5 kHz) and temperature (25–130 °C) stability in energy-storage density, and change rate of both is below 5% within measurement range. This work highlights (1 − x)PT − xBMZ composites as promising materials in energy-storage fields.