Dielectric properties of zinc titanate thin films prepared by Rf magnetron sputtering

Abstract

Zinc titanate thin films of ~500 nm in thickness were synthesized by an RF magnetron sputtering using a sintered ceramic target. After annealing in temperature ranges of 300–800 °C, their phase transition and dielectric properties were investigated as a function of annealing temperature. Crystalline ZnTiO3 phase was first detected at the annealing temperature of 500 °C within XRD detection limit though the sputtered film was mainly amorphous. ZnTiO3 still remained as a main phase although the slight decomposition of ZnTiO3 into Zn2TiO4 and TiO2 occurred in association with the increase of annealing temperature. Dielectric properties were apparently improved with increase of annealing temperature and showed maximum value at 650 °C. Further higher temperature annealing caused inferior dielectric property. These results were explained in terms of the presence of TiO2 (rutile) phase, resulting from the decomposition of ZnTiO3 phase, and the morphology of the thin film.