Dielectric properties of (Yb0.5Ta 0.5)xTi1−xO2 ceramics with colossal permittivity and low dielectric loss

Abstract

High dielectric loss is one of the current obstacles to the application of dielectric materials. In this paper, we synthesized a new dielectric material, i.e., (Yb + Ta)-co-doped TiO2 dielectric material. The (Yb0.5Ta0.5)xTi1−xO2 ceramics were synthesized by the solid-state reaction method. It has been found that (Yb0.5Ta0.5)xTi1−xO2 ceramics had a dense ceramic microstructure, and (Yb0.5Ta0.5)xTi1−xO2 ceramics exhibited the rutile TiO2 structure. All (Yb0.5Ta0.5)xTi1−xO2 ceramics exhibited low dielectric loss ( 105). The optimal dielectric properties are obtained at a doping level of x = 0.05 with dielectric constant of 5.1 × 105 and dielectric loss of 0.037. Further study of the thermal stability of the dielectric properties was performed in the temperature range from − 50 to 250 ℃, which indicates that the ceramic sample with x = 0.05 co-dopant concentration maintains good dielectric properties in the temperature range from − 50 to 100 ℃. XPS shows that high dielectric properties can be explained by the electron-pinned defect-dipole mechanism.