Abstract
The electrical properties (loss tangent, real (e) and imaginary (e″) parts of complex dielectric permittivity, and ac conductivity across the layers) of TlGa1 − xMnxS2 (0 ≤ x ≤ 0.03) layered single crystals have been studied in the frequency range f = 5 × 104 to 3.5 × 107 Hz. The results demonstrate that the dielectric dispersion in the TlGa1 − xMnxS2 crystals has a relaxation nature. Partial substitution of manganese for gallium reduces the dielectric permittivity of TlGaS2 and changes the shape of the e″(f) curve. Over the entire frequency range studied, the ac conductivity of the TlGa1 − xMnxS2 crystals varies as f0.8, characteristic of hopping conduction through localized states near the Fermi level. The Fermi-level density of states, the spread of their energies, and the mean hop distance and time have been estimated.
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