Abstract
The structure, microstructure, and temperature and field dependences of the dielectric properties of thin (0.5–8.0µm) Sn2P2S6 ferroelectric films deposited onto glass and aluminum foil substrates by thermal vacuum evaporation in a quasi-closed volume are studied. The film-thickness and frequency dependences of the dielectric properties and the unipolarity of the C–V characteristics are explained by the presence of near-surface Schottky-type barrier layers.
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