Abstract
The dielectric properties of vacuum-deposited aluminum fluoride thin films have been investigated in the frequency range 10 −1-10 6 Hz and at different temperatures in the range 77°–413°K. These properties are found to be similar to those of other thin amorphous materials. Below room temperature an activation energy of 0.004 eV is found, while at higher temperatures an activation energy of 0.028 eV is suggested. At low temperatures in the frequency range 10 −-10 3 Hz, the conductance varies as f n where n is of the order of 0.80, a value consistent with the theory of hopping in amorphous materials. The conductance also appears to follow the relationship δ = A exp (−BT − 1 4 ) , which is characteristic of phonon-assisted hopping conduction. At higher frequencies the conductivity is approximately proportional to the square of the frequency.
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