Abstract
A comparative electrical characterization study of aluminum oxide deposited by thermal and plasma-assisted atomic layer depositions (ALDs) in a single reactor is presented. Capacitance and leakage current measurements show that the deposited by the plasma-assisted ALD shows excellent dielectric properties, such as better interfaces with silicon, lower oxide trap charges, higher tunnel barrier with aluminum electrode, and better dielectric permittivity , than the thermal ALD . Remarkably, the plasma-assisted ALD films exhibit more negative fixed oxide charge density than the thermal ALD layers. In addition, it is shown that plasma-assisted ALD exhibits negligible trap-assisted (Poole–Frenkel) conduction unlike the thermal ALD films, resulting in higher breakdown electric fields than the thermal ALD prepared films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
