Abstract
The mixed system of BaTiO3 and AlN has been investigated in terms of dielectric properties and microstructure. Two different types of additives, bismuth oxide and bismuth borosilicate glass, were used to lower sintering temperature. First, the addition of a fixed content (3 wt.%) of Bi2O3 provided densification at 1200∘C where monotonous decreases of dielectric constant were found with increasing the content of AlN. On the other hand, the bismuth borosilicate glass was effectively used to decrease firing temperature to 850∘C, which is suitable for thick film capacitor applications. A practical demonstration of thick film capacitors using a Ag electrode on a 96% alumina substrate indicated that the optimum composition of 76BaTiO3-20AlN-4glass may be adequate for generating k of 79.4 and tan δ of 0.014 at 1 MHz as a result of the low temperature firing of 850∘C in air atmosphere.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
