Abstract
The structure, electrical and dielectric properties of SrBi1.8RE0.2Nb2O9 doped with one of seven lanthanide ions (RE = Yb, Tm, Tb, Dy, Er, Sm and Ce) are investigated. The samples are prepared by solid-state reaction method. The single crystals are confirmed as being in a single phase with SrBi2Nb2O9 by X-ray diffraction. Scanning electron microscopy micrographs revealed a remarkable change in the shaped grains. At room temperature, the dielectric loss is found to decrease by substitution of bismuth with lanthanides and the dielectric constant remains essentially constant at higher frequency. Curie temperature, dielectric constant peak at Curie temperature and activation energy decrease with RE-doping. The conductivity results obtained for the samples is explained taking into account the polarization process and metal binding energies.
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