Dielectric properties of RF plasma-deposited a-C:H and a-C:H:N films

Abstract

The effect of deposition parameters on the dielectric properties of a-C:H and a-C:H:N films deposited from an RF-discharge plasma (13.56 MHz) is discussed. The dielectric constant of films deposited at the lowest RF-discharge power is independent of the methane concentration in the gas mixture and increases with increasing RF-discharge power. The introduction of nitrogen into a working gas mixture results in an increase of the dielectric constant. Films are characterized by a frequency dependence of dielectric properties in the 10 4 –10 7 Hz range.