Abstract
AbstractThe electrical properties of high‐purity magnesium oxide (MgO) samples sintered between 1500 and 1650°C were investigated up to 800°C. Dielectric constant, loss tangent and electrical conductivity were measured between 25 and 800°C. Optimum electrical properties were obtained for the sample sintered at 1600°C. The impurities in polycrystalline and single crystal MgO were discussed to understand their effect on electrical properties and the role of grain boundaries. Higher dielectric losses of polycrystalline samples as compared to the single crystal MgO were attributed to the presence of grain boundaries. MgO could be a useful dielectric material for capacitor applications up to 600°C.
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