Dielectric Properties of Nb-Doped PbZrO<SUB>3</SUB> Thin Films Prepared by Pulsed Laser Deposition

Abstract

The preparation of Nb-doped PbZrO3 thin films by pulsed laser deposition and the effects of the Nb-doping on the dielectric properties of PbZrO3 thin films have been investigated. By optimizing film deposition conditions and annealing temperatures, the 3 mol% Nb-doped PbZrO3 thin films was successfully prepared under the partial oxygen pressure of 2 or 5 Pa followed by the rapid thermal annealing at 873 K for 1 min. From X-ray diffractometry, the PbZrO3 phase was found to be crystallized without any preferred orientation. The 3 mol% Nb-doped PbZrO3 film exhibited a double hysteresis loop with a transition field (antiferroelecric to ferroelectric phase) of 208×105 V/m and saturation polarization of 20×10−2 C/m2. It was found that the Nb-doping might contribute to reduce the transition field and polarization of PbZrO3 thin films. In addition, the Nb-doped PbZrO3 film with a thickness of 185 nm showed a ferroelectric hysteresis loop with the parameters of Ps=22×10−2 C/m2, Pr=17×10−2 C/m2, and Ec=320×105 V/m.