Abstract
ABSTRACTIn order to investigate the influence of Sb doping on the dielectric properties of NaCu3Ti3NbO12 ceramics, a series of NaCu3Ti3Nb1–xSbxO12 ceramics were prepared by conventional solid-state reaction technique. Their crystalline structure, microstructure, dielectric properties and complex impedance were systematically investigated. All these ceramics show giant permittivity phenomenon, and their low-frequency dielectric loss decrease significantly but permittivity remains large with increased Sb doping. Impedance spectroscopic analysis reveals that NaCu3Ti3Nb1–xSbxO12 ceramics are composed of insulating grain boundaries and semiconducting grains, and their resistance of grain boundary increases with increased Sb doping. According to internal barrier layer capacitance effect, the decrease of low-frequency dielectric loss in NaCu3Ti3Nb1–xSbxO12 ceramics with increased Sb doping should be caused by the increase of grain boundary resistance.
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