Abstract
The following work presents the results of AC measurements of a SiOx/ZrO2 multilayered nanocomposite subjected to annealing at high temperature. This nanometric structure was deposited on a p-type silicon substrate by alternating vacuum evaporation of two appropriate separate targets. Then it was annealed at 1100 °C which caused creation of silicon nanoparticles in double dielectric matrix – layers of ZrO2 and interlayer SiO2. Electrical measurements were carried out in the frequency range from 50 Hz to 106 Hz and in temperature range from 100 K to 375 K. The measured parameters were impedance Rp, capacitance Cp, phase shift angle θ and dielectric loss tangent tgδ. What is more, dependences of admittance σ and dielectric permittivity ε of the material were determined. On the basis of these values, AC charge transport mechanism and dielectric relaxation mechanisms in this type of systems were proposed.
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