Abstract
The dielectric constant,∈, loss, tanδ, and a.C. Conductivity, σ, of high quality single crystals of LiF have been measured in the frequency range 102 to 105 Hz and in the temperature range 30 to 400° C. ∈ of LiF at 30° C is 8.3 and is frequency independent; tanδ was below detection level (tanδ<0.0001).∈ increases slowly with temperature up to about 150° C (frequency independent region) beyond which it rises rapidly, being frequency dependent with larger values at lower frequencies. A similar behaviour is exhibited by tan δ. The activation energy for conduction in the high temperature region is calculated to be 0.93 eV from log σ against 1/T graphs. Log (Δ∈) against 1/T plots (whereΔ∈ is the difference between the dielectric constant at any temperature and the value at room temperature, ∼ 30° C) yields an activation energy value of 1.0 eV in the high temperature region. This activation energy is found to be independent of frequency. This agreement between the two activation energy values, one for the a.c. conductivity and the other for the∈ increase with temperature. This suggests that the same charge carriers are responsible for the two processes in the high temperature region.
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