Abstract
ABSTRACTImproved Y and Mn alternately doped Ba0.6Sr0.4TiO3 (BST) films have been prepared by sol-gel method at preheating temperature of 550°C, and the structures and dielectric properties of the films have been studied. The doped concentration of Y keeps at 1% mol ratio, while that of Mn has three different doped concentrations (2%, 3% and 4%). X-ray diffraction (XRD) reveals that all films show polycrystalline cubic ABO3 perovskite structures with entrances into A sites of Y3+ ions and B sites of Mn2+ ions. It can be found that the substitution effect of Y3+ ions are stronger than Mn2+ ions and the average grain size of all the films is smaller than that of the pure BST film. The dielectric properties of these films are significantly optimized by this improved method, in particular the tunable capability (tunability) is significantly improved with values of larger than 35% in addition to low dielectric loss of less than 1.5% form −10V to 10V at 1MHz. These excellent tunable dielectric properties which can meet the needs in microwave application are ascribed to the improved Y and Mn alternate doping.
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