Abstract
SrBi2−xGdxNb2O9 (x = 0, 0.1, 0.5) ceramics are prepared by the solid state reaction method. The samples are characterized by X-ray diffraction to ensure that the dopants are substitutional. The microstructures of the ceramics are examined by scanning electron microscope. Energy-dispersive X-ray spectroscopy confirmed the elements making up the samples being analyzed. The temperature dependence of dielectric behavior is investigated in the temperature range from room temperature to 500 °C at various frequencies. Temperature dependence of dielectric permittivity described according to modified Curie–Weiss law. The results suggest that the dielectric permittivity and the dielectric loss decrease with increasing concentration of gadolinium, at room temperature. When reaching up x = 0.5, the diffuseness of the dielectric peak becomes more pronounced. The dielectric loss can be viewed as a hopping mobility of charge carriers risen from oxygen vacancies. The aim of Gd3+ ions substitution for Bi3+ ions is to reduce dielectric loss.
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