Dielectric properties of ferroelectric/DMS heterointerface using YMnO 3 and Ce doped Si

Abstract

Bottom gate type Al/Si:8.2 at%Ce/YMnO 3/Pt capacitor was fabricated. Although it was polycrystalline, we successfully obtained Si:8.2 at%Ce film on ferroelectric YMnO 3. The dielectric properties of the capacitor were carefully investigated. Although the capacitance shows frequency dispersion, the capacitor exhibits a ferroelectric type C– V hysteresis loop. From the PUND and P– V measurements, ferroelectric polarization was distinguished from the another polarization, Based on these dielectric measurements, effect of polarization induced by the ferroelectric YMnO 3 on the carrier modulation in the diluted magnetic semiconductor, Ce doped Si film was discussed.