Dielectric properties of extended defects in silicon studied by high-resolution transmission EELS

Abstract

We have found that the nanoscale defective structure of the {113} extended defect in silicon which consists of no dangling bond gives rise to the change of dielectric properties by means of high-resolution transmission electron energy-loss spectroscopy (HR-TEELS). The dielectric functions of nanoscale regimes were determined from the loss-functions by the Kramers-Kronig analysis. The peak in the imaginary part of the dielectric function ε2 measured from the defective region shifts at 2.0–2.5 eV. We attribute the result to the nonvertical interband transitions between the localized defect states at the band edges and or the effect of the periodicity breakdown.