Abstract
The dielectric properties of composition spread SiO 2–Al 2O 3 thin films deposited by off-axis radio-frequency magnetron sputtering at room temperature were explored to obtain optimized compositions, which have low dielectric constants and losses. The specific points (compositions) showing superior dielectric properties of low dielectric constants (8.13 and 9.12) and losses (tanδ ∼0.02) at 1 MHz were found in area of the distance of 25.0 mm (Al 2Si 3O 8) and 42 mm (Al 2.4Si 3O 8) apart from SiO 2 target side in 75 mm × 25 mm sized Pt/Ti/SiO 2/Si(1 0 0) substrates, respectively. The specific thin films were amorphous phase and the compositions were Al 2Si 3O 8 ( k ∼8.13) and Al 2.4Si 3O 8 ( k ∼9.12).
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
