Dielectric properties of CdSe quantum dots-loaded cryogel for potential future electronic applications

Abstract

Cryogels are an outstanding class of materials with special and functionalized physical properties in various fields and privileges for different industrial applications. Due to unique properties of quantum dots, properties of cryogels can be engineered by adding quantum dots in. In this study, both p(HEMA)-based cryogel and CdSe QDs synthesized and characterized, separately. Then, CdSe QDs were loaded into p(HEMA) cryogels by immersing cryogel into QDs solutions. FTIR-ATR, SEM and TGA characterizations were performed to ensure that CdSe QDs penetrate p(HEMA) cryogels effectively. Dielectric properties of CdSe QDs-loaded cryogel were investigated using Electrical Impedance Spectroscopy (EIS). Real and imaginary parts of dielectric constants were decreased significantly at low frequencies in QD-loaded cryogels. While real part of impedance was increased in CdSe QDs-loaded cryogel at low frequencies. In addition, at high frequencies, those parameters were observed to be same in both cases.