Dielectric properties of CaCu3Ti4O12 ceramics doped with aluminium and fluorine

Abstract

The ceramics СaСu3Тi4–xAlxО12–0.5x–yFy were prepared using solid-state reactions technique and pre-synthesized CaTiO3. It was found that the resistances of both the grain boundary RGB and the interface between sample and electrode RSE increase at the combined introduction of Al3+ and F– ions. At 1100 °С, a decrease in dielectric properties after 12 h of sintering time due to copper losses was observed. The samples with x/y = 0.04/0.04 sintered for 10 h at 1 kHz are characterized by the following dielectric parameters: ε′ ≈ 72,000 and tan δ ≈ 0.047. In the sample x/y = 0.04/0, the lowest dielectric loss (tan δ ≈ 0.044) were found.