Abstract
Ba(Zn1/3Ta2/3)O3 (BZT) thin films were grown on Pt-coated Si substrates at 500°C substrate temperatures by pulsed electron beam deposition method and post-annealed at 600 and 650°C for 1h. The X-ray diffraction patterns indicate that the as-grown films are partially crystallized but single-phase cubic perovskite structure was formed in annealed films. The temperature dependence of the dielectric constant of the BZT films was recorded in the −100 to +100°C range. The annealing treatment induces a decrease of the temperature coefficient of the dielectric permittivity with an order of magnitude, from 2000 to 100ppm/°C. The influence of the annealing treatments on the temperature behavior of the BZT films was evidenced; a dielectric constant of about 21 at room temperature was obtained for the films annealed at 650°C.
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