Abstract
Ba 0.6 Sr 0.4 Ti O 3 (BST) thin films buffered with Pb0.3Sr0.7TiO3 (PST) at each side of the interface contact with electrodes (PST/BST/PST) were deposited on Pt∕Ti∕SiO2∕Si substrates. The dielectric properties of the films were measured using planar Pt∕PST∕BST∕PST∕Pt∕Ti∕SiO2∕Si capacitor structures. The existence of a PST layer between the BST and Pt electrode can improve the dielectric properties of the BST film. The loss tangent of the multilayered films annealed at 750°C was found to be 0.016 at 1MHz and room temperature. The films showed a ∼31.7% tunability of the permittivity at an applied bias field of 0.85MV∕cm. This suggests that such films have potential applications for integrated device applications.
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