Abstract
We report the unexpectedly excellent dielectric properties of amorphous thin films with compositions in the Bi–Ti–O system. Films were deposited by RF magnetron reactive co-sputtering. In the composition range of 0.5 < [Formula: see text] < 0.7, amorphous [Formula: see text][Formula: see text][Formula: see text] exhibits excellent dielectric properties, with a high dielectric constant, [Formula: see text] [Formula: see text] 53, and a dissipation factor as low as tan [Formula: see text] = 0.007. The corresponding maximum breakdown field reaches [Formula: see text]1.6 MV/cm, yielding a maximum stored charge per unit area of up to 8 [Formula: see text]C/cm2. This work demonstrates the potential of amorphous Bi–Ti–O as a high-performance thin-film dielectric material that is compatible with high-performance integrated circuits.
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