Abstract
Orthorhombic HoMnO3 films were prepared epitaxially on Nb-doped SrTiO3 (110) single crystal substrates by using pulsed laser deposition technique. The films showed perfectly a-axis crystallographic orientations and were well aligned with the substrates. The complex dielectric properties of HoMnO3 films were measured as functions of temperature (77–250 K) and frequency (100 Hz–100 kHz). Thermally activated dielectric relaxations were found, and the respective peaks shifted to higher temperatures as the measuring frequency increased. The frequency dependence of dielectric properties was ascribed to the universal dielectric response models, and the hopping conductivity and the dipolar effects induced by the charge carriers were used to explain the results.
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