Abstract
The Bi1.5MgNb1.5O7 thin films with cubic pyrochlore structure were prepared onto Pt-coated sapphire substrates by rf magnetron sputtering deposition from a stoichiometric target. Dielectric measurements indicated that the Bi1.5MgNb1.5O7 thin films exhibited low dielectric loss of ∼0.0018–0.004, medium dielectric constant of ∼86, and superior tunable dielectric properties at room temperature. A bias field of 1.6 MV/cm resulted in the maximum voltage tunability of 39%. A brief discussion is given on the enhanced tunability compared to Bi1.5ZnNb1.5O7 thin films. The low loss and superior tunability make Bi1.5MgNb1.5O7 thin films promising for potential tunable capacitor applications.
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