Dielectric properties and structural defects in BaTi1−xSnxO3 ceramics

Abstract

As a function of Sn doping concentration x, dielectric properties and X-ray diffraction measurements were carried out on BaTi1-xSnxO3 (BTSx) ceramics fabricated by the solid-state reaction route. Positron annihilation lifetime spectroscopy and coincident Doppler-broadening spectroscopy were also measured for the evaluation of defects in the BTSx ceramics. Dielectric properties measurement reveals that the permittivity of BTSx ceramic gradually increases with increasing Sn dopant content for x≤3%, and then decreases. This change of permittivity is found to agree well with the relative defect concentration estimated using two positron annihilation techniques. The S-W plot indicates that the defect species do not change with Sn doping. The variation correlations between defects and dielectric properties further proves that BTSx ceramics with the higher relative defect concentration present a lower permittivity.