Abstract
The effect of silver ions (2 mol %) on the dielectric properties and electrical conductivity of TlGaS2 single crystals grown by the Bridgman–Stockbarger method is investigated. The experimental results of studying the frequency dispersion of the dielectric coefficients of TlGaS2 single crystals (2 mol % Ag) makes it possible to establish the nature of dielectric losses and the charge-transfer mechanism, to evaluate the density of states near the Fermi level, the spread of states, the average hopping time and length, and the concentration of deep traps responsible for ac conductivity. The Ag doping of the TlGaS2 single crystals results in an increase in the density of states near the Fermi level and in a decrease in the average hopping time and length.
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