Abstract
The results of investigation of the dielectric properties in the millimeter and terahertz ranges of diamond samples prepared by using the direct current arc plasma jet (APJ) and the microwave plasma chemical vapour deposition (MPCVD) techniques are presented. Various methods for the measurements of the dielectric properties using high-Q open resonators and cylindrical cavity resonators are discussed while the activation energy of the conductivity and point defect parameters (such as concentration and activation energy of the defect induced levels) in both kinds of diamonds are studied via Conductivity and Charge-based Deep Level Transient Spectroscopy (Q-DLTS) measurements (for the first time in APJ diamond) and compared. The absorption mechanisms in these diamonds grown by different methods are discussed.
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