Dielectric Polarization Noise in Low-Noise Si Junction Field-Effect Transistors at 77 K

Abstract

The dielectric polarization noise in low-noise silicon junction field effect transistors (Si JFETs) was measured at 77 K and at low frequencies. The noise generated in the p-n junction was consistent with that of previous measurements. A noise larger than or comparable to the amount of noise in the p-n junction was found at the lead connected to the gate and at the gate electrode. All of the power spectra of the noise current were proportional to the frequency. Reduction of the dielectric polarization noise is important for ultra low-noise current measurement.