Abstract
(Pb1-xSrx)Nb2O6-NaNbO3 (PSNN) dielectric thin films, x changed from 0.4 to 0.6, were deposited by pulsed laser deposition (PLD) technology on p+-Si substrate. Post-annealing was performed on the dielectric thin films at 800oC in oxygen atmosphere for 10 minutes. The Sr-composition dependence of the dielectric performance in this thin film materials system was investigated. The results indicated that dielectric constant changing with Sr-composition in the PSNN thin films showed the shape of a parabola, resulting from the morphotropic phase boundary (MPB) effect caused by the existence of both orthorhombic and tetragonal tungsten bronze phases. The maximized dielectric constant of PSNN was 58 and the leakage current density was about 2.485×10-9 A·cm-2 by calculated at-1 V in 1 kHz. The breakdown field strength reached 220 kV/mm of the developed PSNN thin film system, which is promising in energy storage systems application.
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