Abstract
Numerical studies are presented for each transition of GaAsSb alloy. The dielectric function of real and imaginary parts calculation for each transition are obtained by integrating the Kramers–Kronig (KK) relation in the entire photon energy range of 0.0–6.0 eV. We observed a redshift in the optical spectra at a higher percentage of Sb. Our calculations are in agreement with the reported experimental data for a GaAsSb alloy from 0.0 eV to 6.0 eV. The results indicate that the investigated GaAsSb alloy is useful for several applications, such as photodetectors, photodiodes, and solar cells.
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