Abstract
Three-layer epitaxial SrRuO3/SrTiO3/SrRuO3 heterostructures with the 900-nm-thick intermediate layer of strontium titanate have been grown on single-crystal (001)La0.29Sr0.71Al0.65Ta0.35O3 substrates by the laser evaporation method. Plane-parallel film capacitors have been formed on the basis of the grown heterostructures using photolithography and ion etching. Temperature dependences of the dissipation factor have been measured for these capacitors at different bias voltages applied to strontium ruthenate electrodes. Temperature dependences of the permittivity of the intermediate SrTiO3 layer in the formed capacitor structures are visualized with compensation of the internal electric field and without it. The reasons for the sharp increase in the dielectric loss in the formed film capacitors at temperatures below 50 K are analyzed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
