Abstract
AbstractEfficient and reliable mode converters with broadband operation and small footprint will enable high‐density silicon photonic integrated circuits to build high bitrate optical networks and handheld optical devices. Here, all‐dielectric nanoaperture metasurfaces in the silicon layer of a silicon‐on‐insulator platform are reported for mode‐order conversion with an ultrasmall footprint. Utilizing the advantages of an abrupt width change and metasurface, the mode conversion between TE00 and TE10 modes is realized with a conversion efficiency as high as ≈90% in simulations and 83.1% in experiments at λ = 1.55 µm within an ultrashort conversion length of about 2.42 µm, the shortest ever achieved. The incident TE00 mode is converted to TE10 mode with purity of more than 90% in a broadband (Δλ ≈ 230 nm) wavelength range from 1.42 to 1.65 µm. Moreover, optimizing the number, position, and dimension of nanoapertures, it is further demonstrated that the nanoaperture metasurface design can enable mode conversion between silicon waveguides of different thicknesses and different relative positions, and between TM modes.
Published Version
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