Dielectric functions E1 and E1 + Δ in near region of critical points and chemical composition of near surface layers of ions implanted GaAs

Abstract

The studies were carried out using the semi-insulating SI semiconductor. The surfaces (100) of GaAs were irradiated by the noble gases Ne+ and Kr+ ions. The fluences were in the range from 1 × 1013 cm−2 to 3 × 1016 cm−2. The dielectric functions were obtained for the virgin and implanted semiconductors. The investigations were carried out for the near surface layers applying the spectroscopic ellipsometry (SE). The chemical composition was determined using the X-ray photoelectron spectroscopy (XPS). It was found that the dielectric functions values and chemical compositions of the native oxides are different for the samples implanted with light and heavy noble gases ions.