Abstract
We report the pseudodielectric functions and the critical points of GaAsxSb1−x ternary alloy films. Data were obtained by performing spectroscopic ellipsometry on 1-μm-thick films grown on (001) GaAs by using molecular beam epitaxy. Artifacts from surface contaminants, including oxide overlayers, were minimized by using in-situ chemical cleaning, leading to accurate representations of the bulk dielectric responses of these materials. We determined the energies of the E1, E1+Δ1, E′0, E′0+Δ′0, E2, E′2, and E′1 critical points from numerically calculated second energy derivatives, as well as their compositional dependences by using lineshape fitting.
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