Dielectric films fabricated in plasma as passivation of 4H-SiC Schottky diodes

Abstract

In this report, we propose Al 2O 3 and AlN films as passivation for high-voltage SiC Schottky barrier diodes. A reactive pulse plasma enhanced chemical vapour deposition method is used to form the layers. The comparison between the Schottky barrier diodes with and without passivation shows the effectiveness of Al 2O 3 layer on the reverse current decrease as a result of the surface states reduction.