Dielectric field dependence of doped silica glass-ceramics

Abstract

The dielectric properties of two heavily doped silica glass-ceramics are reported in the frequency range 10−2 to 105Hz with field, both d.c. and a.c., as variable. The response of the dielectric loss peaks in both systems was found to be field dependent with two separate behaviours, a d.c. conductance-dominated imaginary component corresponding to electronic injection at the electrodes, and a capacitive component corresponding to a dipolar loss-peak process. It was found that there is a general relationship between loss-peak response and applied field that holds for both loss-peak systems. At the highest fields, one of the materials is seen to undergo a phase transition.