Dielectric enhancement of PbZr0.3Ti0.7O3/LaNiO3 multilayer thick film

Abstract

Multilayer thick films (∼4 μm) with compositional PbZr0.3Ti0.7O3/LaNiO3 layers and one‐layer PZT thick films were prepared on the silicon substrate by radio‐frequency magnetron sputtering. PbZr0.3Ti0.7O3/LaNiO3 multilayer thick film are characterized by highly preferential (100)‐oriented growth and columnar microstructure due to alternately introducing LaNiO3 seeding layers. The effects of LaNiO3 layers on microstructure and electrical properties of PbZr0.3Ti0.7O3 thick films were investigated in detail. The results show that both PZT and PbZr0.3Ti0.7O3/LaNiO3 multilayer thick film were pure perovskite crystalline phase. The PbZr0.3Ti0.7O3 film texture was dense and well adhered on the LaNiO3 layer. PbZr0.3Ti0.7O3/LaNiO3 multilayer thick film possessed obvious enhanced dielectric properties compared with PZT thick film: ϵr ∼2450 (10 kHz) and tanδ ∼0.02 (10 kHz). Rayleigh law was used to analysis the behavior of the enhanced dielectric properties and the pinched‐shaped polarization‐electric field hysteresis loops. The larger Rayleigh parameter, α ∼51.1408 cm kV−1 (1 kHz) indicates the larger extrinsic contribution to permittivity and strong domain‐wall–defect charge interaction. The leakage current behaviors of the multilayer thick film were also investigated in detail.