Abstract
Frequency and temperature dielectric response and electrical conductivity behavior around the antiferroelectric–paraelectric phase transition temperature were studied in PbZr0.93Sn0.07O3 antiferroelectric single crystals. The contribution of conductive processes to dielectric relaxation for the studied frequency range is discussed, considering oxygen vacancies and electronic transport. The relaxation processes below the transition temperature are associated with short-range polaronic hopping due to the interaction of the charge carriers (trapped electrons) with the distorted crystal lattice. Based on the specific coupling between electrons and phonons in the largely distorted oxygen octahedral sublattice of PbZr1−xSnxO3 crystals, an attempt to explain the formation of the incommensurate phase was undertaken.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
