Dielectric Constant of the Quasi-One-Dimensional Ferroelectrics PbHPO4

Abstract

Effects of heat treatment and application of external bias field on the temperature dependence of static dielectric constant along the ferroelectric axis in the paraelectric phase have been measured for PbHPO 4 single crystals grown by the tetramethoxy-silane-gel method. The crystals were proved to be biased in both directions almost equally by internal field. The internal field is induced by keeping the crystal at the ferroelectric phase and reduced by heat treatment at a high temperature. Supposing such an internal field, we can plainly describe the temperature dependence of dielectric constant on the basis of the quasi-one-dimensional Ising model.