Abstract
The dielectric constant of Al 0.3 Ga 0.7 As:Si was measured near the metal-insulator transition (MIT). The effective electron concentration of the system was adjusted by using persistent photoconductivity. The temperature dependence of the dielectric constant is qualitatively explained by the Efros-Shikrovskii model of disordered insulators. The best fitted value of the MIT critical exponent is close to 2.
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