Abstract
ABSTRACT Metal/oxide/semiconductor capacitors with a Ga2O3 layer were fabricated on p-type Si (100) substrates by the rf magnetron sputtering technique. The Ga2O3 thin films showed uniform surfaces and stable interfaces. The dielectric properties of the MOS structure according to the annealing temperature and thickness of the films were determined by capacitance-frequency and capacitance-voltage measurements. The dielectric constant of the Ga2O3 thin films processed at 650°C was 10. The memory window of the Ga2O3 film was 1.7 V at an applied voltage of 5 V. We observed the behavior of non-uniform elemental distribution in the film by angle-resolved x-ray photoelectron spectroscopy.
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