Abstract
We have noticed for the first time that the post-breakdown resistance of SiO/sub 2/ in MOS devices is strongly related to SiO/sub 2/ breakdown characteristics such as the polarity dependence or the oxide field dependence of charge-to-breakdown Q/sub bd/ in the statistical sense. We discuss, in this paper, the dielectric breakdown mechanism of SiO/sub 2/ from the viewpoint of the statistical correlation between the post-breakdown resistance distribution, the Q/sub bd/ distribution, and the emission energy just at the SiO/sub 2/ breakdown, by changing the stress polarity, stress field, and the oxide thickness and device area.
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