Abstract
The dielectric breakdown in thick (T, > 15 nm) Si02 films is examined focusing on its statistical properties. Time-dependent dielectric breakdown is measured using the Fowler-Nordheim and the substrate hot hole injection techniques under various bias conditions. It is demonstrated that in thick oxide films the Weibull slope is a function of the stress condition, and it is much smaller than the value predicted hy the percolation theory. We discuss on the effect of trapped holes on the breakdown statistics.
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