Abstract
Co-evaporated BiSiO cermet films showed polycrystalline structure with amorphous SiO inclusions in Bi continuum when the Bi content was more than 50 at%, whereas for the films with more than 50 at% of SiO, Bi particles were spherical and dispersed in an amorphous SiO continuum. The resistivity increased with increasing SiO composition. The observed dielectric behaviour at high insulator compositions was in agreement with the theoretical approximations of Maxwell-Garnett.
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