Dielectric and energy storage properties of PbO–SrO–Nb2O5–Na2O–Si thin films by annealing

Abstract

Dielectric and energy storage properties of PbO–SrO–Na2O–Nb2O5–SiO2 (PSNNS) thin films with annealing temperature from 700 to 850 °C were investigated by measuring their capacitance-electric filed curve and hysteresis loops. The results show that the highest dielectric constant and energy density are 81.2 and 17.0 J·cm−3, respectively, which is obtained in the sample with annealing temperature of 800 °C. Annealed from 700 to 800 °C, the dielectric constant and energy storage performance of PSNNS films are continuously improved. However, with annealing temperature up to 850 °C, their dielectric constant decreases, which might be related with the removal of interfacial defects as a function of annealing temperature. Defect is one of the causes of space charge phenomenon, resulting in the increase in dielectric constant. Moreover, the microstructure analysis by X-ray diffraction (XRD) and transmission electron microscope (TEM) indicates that the change of crystallization phase and interfacial polarization takes responsibility to the results.